Rongge

This high voltage generator was designed  with the aim of testing the electrical break-down protection used on the railways. These  protection measures are used to ensure that  any external metal parts will never be at a  high voltage. If that were about to happen,  a very large current would flow (in the order  of kilo-amps), which causes the protection  to operate, creating a short circuit to ground effectively earthing the metal parts. This hap-pens when, for example, a lightning strike hits  the overhead line (or their supports) on the  railways. This generator generates a high voltage of  1,000 V, but with an output current that is limited to few milliamps. This permits the electrical breakdown protection to be tested with-out it going into a short circuit state. The circuit uses common parts throughout: a  TL494 pulse-width modulator, several FETs or  bipolar switching transistors, a simple 1.4 VA  mains transformer and a discrete voltage multiplier. P1 is used to set the maximum...

This is an amplifier circuit using ic LM12 as the main amplifier. This amplifier has a 150Watt power output and has a 4 ohm impedance. These amplifiers have a classified high output power. The frequency response of 10Hz to 30KHz. Supply Voltage at least 9 Volt and 50 Volt CT. See schematic Below : Schematic High Power amplifier with LM12

This inverter circuit works with a transistor and transformer and other components to increase the voltage becomes high. Input supply voltage ranging from 3V to 6V DC, later it was raised to high voltage AC. However, in this inverter circuit output current is very small, probably under 0.1A even smaller. However, its use you can apply it on a fluorescent lamp 10W maximum power only, and that too takes time to switch on fluorescent lamps. Part List R1 = 4K7 R2 = 2K2 R3 = 330K C1 = 100nF C2 = 100nF 275V C3 = 0.22uF 275V Q1 = D506 L1 = 100 times winding, with 0.8mm diameter copper wire L2 = 50 times winding, with 0.8mm diameter copper wire L3 = 5000 times winding, with 0.4mm diameter copper wire

The UCC27518 and UCC27519 single-channel, high-speed, low-side gate driver device is capable of effectively driving MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, UCC27518 and UCC27519 are capable of sourcing and sinking high, peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 17 ns. The UCC27518 and UCC27519 provide 4-A source, 4-A sink (symmetrical drive) peak-drive current capability at VDD = 12 V. The UCC27518 and UCC27519 are designed to operate over a wide VDD range of 4.5 V to 18 V and wide temperature range of -40°C to 140°C. Internal Under Voltage Lockout (UVLO) circuitry on VDD pin holds output low outside VDD operating range. 4A High-Speed Low-Side Gate Driver  Circuit Diagram Features Low-Cost, Gate-Driver Device Offering Superior Replacement of NPN and PNP Discrete Solutions Pin-to-Pin Compatible With TI’s TPS2828 and the TPS2829 4-A Peak ...

Here are two transistors manufactured by Toshiba. 2SC5200 and 2SA1943 transistor pair has been widely applied or used in the amplifier power amplifier because the transistor has a large power, and also not too expensive than other large power transistors. This transistor has the advantage of High breakdown voltage: VCEO = 230 V (min), Suitable for use in 100-W high fidelity audio amplifier's output stage. For more information, please see datasheet below. Maximum Ratings (Tc = 25°C) Electrical Characteristics (Tc = 25°C)